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Same model may have multiple batches, images only for reference.
IXFP5N50P3 Real Image
Same model may have multiple batches, images only for reference.

IXFP5N50P3

Part No IXFP5N50P3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 5A TO-220
Datasheet
IXFP5N50P3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 6.9nC @ 10V
Max Input Capacitance 370pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 114W (Tc)
Maximum Rds On at Id,Vgs 1.65 Ohm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049508-IXFP5N50P3
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IXFP5N50P3 CAD Model

Description

The IXYS IXFP5N50P3 is an N-channel MOSFET with a drain-source breakdown voltage of 500V and a continuous drain current of 5A (Tc).

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 5A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 1mA
  • Maximum Gate Charge: 6.9nC @ 10V
  • Maximum Input Capacitance: 370pF @ 25V
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-220AB
  • Compliance: RoHS compliant

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.5849 $62.9245
12+ $10.3269 $123.9228
18+ $10.0035 $180.0630
24+ $9.6812 $232.3488
31+ $9.3590 $290.1290
42+ $8.3899 $352.3758
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Availability: 20,000 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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