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Same model may have multiple batches, images only for reference.
IXFP80N25X3 Real Image
Same model may have multiple batches, images only for reference.

IXFP80N25X3

Part No IXFP80N25X3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 80A TO220AB / N-Channel 250 V 80A (Tc) 390W (Tc) Through Hole TO-220-3
Datasheet
IXFP80N25X3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 83 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5430 pF @ 25 V
Power Dissipation (Max) 390W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-220-3
Case / Package TO-220-3
Base Product Number IXFP80
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1325254-IXFP80N25X3
Ultra Librarian 3D Model Ultra Librarian IXFP80N25X3 CAD Model

Description

The IXYS IXFP80N25X3 is a N-Channel MOSFET transistor that has a drain to source voltage of 250V and can handle a continuous drain current of 80A @ 25°C.

  • Maximum On-Resistance: 16mOhm @ 40A and 10V gate to source voltage
  • Gate Charge: 83nC @ 10V
  • Input Capacitance: 5430pF @ 25V
  • Housing: TO-220-3 package
  • Operating Temperature Range: -55°C to 150°C
  • Suitable for Use: in various applications such as power supplies, motor drives, and inverters.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.4071 $51.2568
20+ $5.2572 $105.1440
30+ $5.0929 $152.7870
41+ $4.9286 $202.0726
53+ $4.7643 $252.5079
71+ $4.2714 $303.2694
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