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HAT2201WP-EL-E

Part No HAT2201WP-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description 15A, 100V, N-CHANNEL MOSFET
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta)
Rds On (Max) @ Id, Vgs 43mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 10 V
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-WPAK
Package / Case 8-PowerWDFN
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 596035-HAT2201WP-EL-E
Ultra Librarian 3D Model Ultra Librarian HAT2201WP-EL-E CAD Model

Description

The 596035-HAT2201WP-EL-E is a single FET, MOSFET transistor in the category of discrete semiconductor products.

  • Channel Type: N-channel
  • Drain to Source Voltage (Vdss): 100 V
  • Continuous Drain Current (Id) @ 25°C: 15A
  • Rds On (Max): 43mOhm @ 7.5A and 10V
  • Mounting Type: Surface mount device
  • Package: 8-PowerWDFN
  • Gate Charge (Qg) @ maximum Vgs: 21 nC @ 10V
  • Input Capacitance (Ciss) @ maximum Vds: 1450 pF @ 10V
  • Operating Temperature Range: Up to 150°C
  • MSL Level: 1 (unlimited)
  • REACH: Unaffected
  • HTSUS Code: 0000.00.0000
  • Manufacturer: Renesas Electronics America
  • Product Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8768 $65.6880
80+ $1.5400 $123.2000
120+ $1.4918 $179.0160
160+ $1.4438 $231.0080
210+ $1.3956 $293.0760
280+ $1.2513 $350.3640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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