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IXFR200N10P Real Image
Same model may have multiple batches, images only for reference.

IXFR200N10P

Part No IXFR200N10P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 133A ISOPLUS247
Datasheet
IXFR200N10P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 133A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 8mA
Max Gate Charge 235nC @ 10V
Max Input Capacitance 7600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package ISOPLUS247
Dimension ISOPLUS247
Win Source Part Number 1049515-IXFR200N10P
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXFR200N10P CAD Model

Description

The IXFR200N10P is a MOSFET manufactured by IXYS.

  • Power Dissipation: 300W (Tc)
  • Mounting Type: Through Hole
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Temperature Range: -55°C to 175°C (TJ)
  • Case/Package: ISOPLUS247
  • Dimension: ISOPLUS247
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current at 25°C: 133A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 8mA
  • Maximum Gate Charge: 235nC @ 10V
  • Maximum Input Capacitance: 7600pF @ 25V
  • Maximum Rds On at Id, Vgs: 9 mOhm @ 100A, 10V
  • Supply and Demand Status: balanced

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