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Same model may have multiple batches, images only for reference.
IXFT12N100Q Real Image
Same model may have multiple batches, images only for reference.

IXFT12N100Q

Part No IXFT12N100Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description HiPerFETTM Power MOSFETs Q Class
Datasheet
IXFT12N100Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1000V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5.5V @ 4mA
Gate Charge (Qg) (Maximum) @ Vgs 90nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2900pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 1.05 Ohm @ 6A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package TO-268
Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Win Source Part Number 1191135-IXFT12N100Q
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXFT12N100Q
Introduction Date October 09, 2000
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian IXFT12N100Q CAD Model

Description

The IXFT12N100Q is an obsolete MOSFET component manufactured by IXYS.

  • Product: IXFT12N100Q
  • Manufacturer:IXYS
  • Series: HiPerFET
  • Package: TO-268-3, D3Pak
  • Current Continuous Drain: 12A @ 25°C
  • Maximum Power Dissipation: 300W @ Tc
  • Rds On: 1.05 Ohm @ 6A and 10V
  • Supply and Demand Status: Limited
  • Alternative Parts: MTV10N100E, MTV10N100E-RL, and APT1001RSLC

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