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IXFT88N30P

Part No IXFT88N30P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 88A TO268 / N-Channel 300 V 88A (Tc) 600W (Tc) Surface Mount TO-268AA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Polar
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 44A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6300 pF @ 25 V
Power Dissipation (Max) 600W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Base Product Number IXFT88
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 992493-IXFT88N30P
Ultra Librarian 3D Model Ultra Librarian IXFT88N30P CAD Model

Description

The IXFT88N30P is a MOSFET transistor with N-channel FET type and drain to source voltage of 300 V.

  • Continuous Drain Current: 88A @ (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
  • Power Dissipation: 600W (Tc)
  • Temperature Range: -55°C ~ 150°C (TJ)
  • Package / Case: TO-268-3, D²Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268AA
  • Series: HiPerFET™, Polar series MOSFET transistor
  • Mounting Technology: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $48.2628 $96.5256
3+ $39.6003 $118.8009
5+ $38.3633 $191.8165
7+ $37.1252 $259.8764
9+ $35.8882 $322.9938
11+ $32.1760 $353.9360
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 824 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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