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IXFV22N50P

Part No IXFV22N50P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description Polar Power MOSFET HiPerFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET, PolarHT
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5.5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs 50nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2630pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 350W (Tc)
Rds On (Maximum) @ Id, Vgs 270 mOhm @ 11A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package PLUS220
Package TO-220-3, Short Tab
Win Source Part Number 1191144-IXFV22N50P
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXFV22N50P
Introduction Date May 10, 2006
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian IXFV22N50P CAD Model

Description

The IXYS MOSFET is a N-channel channel type MOSFET with a drain source voltage of 500V and a Vgs(th) (maximum) @ Id of 5.5V @ 2.5mA.

  • Channel Type: N-channel
  • Drain Source Voltage: 500V
  • Vgs(th) (maximum) @ Id: 5.5V @ 2.5mA
  • Technology: Through hole
  • Packaging: Tube
  • Case/Package: TO-220-3, Short Tab
  • Gate Charge (Qg) (maximum) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (maximum) @ Vds: 2630pF @ 25V
  • Status: Obsolete
  • Popularity: Medium
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $28.1531 $84.4593
5+ $23.1000 $115.5000
8+ $22.3781 $179.0248
11+ $21.6563 $238.2193
14+ $20.9344 $293.0816
19+ $18.7688 $356.6072
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Availability: 445 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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