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Same model may have multiple batches, images only for reference.
IXFX150N15 Real Image
Same model may have multiple batches, images only for reference.

IXFX150N15

Part No IXFX150N15
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 150A PLUS247
Datasheet
IXFX150N15 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 8mA
Max Gate Charge 360nC @ 10V
Max Input Capacitance 9100pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 560W (Tc)
Maximum Rds On at Id,Vgs 12.5 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PLUS247-3
Dimension TO-247-3
Win Source Part Number 205692-IXFX150N15
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFX150N15 CAD Model

Description

The IXFX150N15 is a N-channel MOSFET manufactured by IXYS.

  • Mounting: Through-hole
  • Package: PLUS247-3
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 150A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 8mA
  • Maximum Gate Charge: 360nC @ 10V
  • Maximum Input Capacitance: 9100pF @ 25V
  • Maximum Rds On @ Id, Vgs: 12.5 mOhm @ 75A, 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Category: Discrete Semiconductor Product
  • Supply and Demand Status: Limited

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17+ $6.9323 $117.8491
26+ $6.7163 $174.6238
36+ $6.4992 $233.9712
46+ $6.2832 $289.0272
62+ $5.6329 $349.2398
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Availability: 9,700 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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