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Same model may have multiple batches, images only for reference.
IXFX24N100F Real Image
Same model may have multiple batches, images only for reference.

IXFX24N100F

Part No IXFX24N100F
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1KV 24A PLUS247-3 / Trans MOSFET N-CH 1KV 24A 3-Pin(3+Tab) PLUS 247
Datasheet
IXFX24N100F Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerRF
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1000V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5.5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs 195nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6600pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 560W (Tc)
Rds On (Maximum) @ Id, Vgs 390 mOhm @ 12A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package PLUS247-3
Package TO-247-3
Win Source Part Number 777626-IXFX24N100F
Popularity Medium
Supply and Demand Status Limited
Family Name IXFX24N100F
Introduction Date January 18, 2002
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IXFX24N100F CAD Model

Description

IXYS's HiPerRF series MOSFET, IXFX24N100F, is a through-hole device, manufactured by IXYS.

  • Manufacturer Package: PLUS247-3
  • Channel Type: N
  • Drain-Source Voltage: 1000V
  • Continuous Drain Current @ Tc: 24A
  • Power Dissipation @ Tc: 560W
  • Maximum Gate-Source Voltage: ±20V
  • Gate Threshold Voltage: 5.5V @ 8mA
  • Input Capacitance @ 25V: 6600pF
  • Gate Charge @ 10V: 195nC
  • Rds On @ 12A, 10V: 390 mOhm
  • Technology: MOSFET
  • Drive Voltage: 10V
  • Operating Temperature: -55°C to 150°C (TJ)
  • ECCN: EAR99
  • Status: Obsolete

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