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SI4840DY-T1-E3

Part No SI4840DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 40V 10A 8-Pin SOIC N T/R / MOSFET N-CH 40V 10A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 28nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.56W (Ta)
Maximum Rds On at Id,Vgs 9 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 100456-SI4840DY-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Family Name Si4840DY
Introduction Date May 11, 2000
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI4840DY-T1-E3 CAD Model

Description

The Vishay Si4840DY MOSFET is a single N-channel FET with a drain-source breakdown voltage of 40V and a continuous drain current of 10A @ 25°C.

  • Package: 8-SO
  • Technology: MOSFET
  • Application: Suitable for use in various industrial applications, including power management
  • Features: fast recovery speed and low input capacitance
  • Benefits: a reliable and efficient component that provides high performance and long-term stability

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8357 $50.1420
150+ $0.6858 $102.8700
230+ $0.6643 $152.7890
315+ $0.6429 $202.5135
405+ $0.6215 $251.7075
540+ $0.5572 $300.8880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,118 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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