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IXFX32N80P

Name: IXFX32N80P
Brand: IXYS
SKU: 608463
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IXFX32N80P
Manufacturer	IXYS
Catalog	FETs - Single
Description	PolarHV HiPerFET Power MOSFET \| MOSFET N-CH 800V 32A PLUS247
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	800V
Id - Continuous Drain Current	32A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	270mOhm at 16A, 10V
Gate Source Voltage(th) (Maximum) at Id	5V at 8mA
Gate Charge (Qg) (Maximum) at Vgs	150nC at 10V
Gate Source Voltage (Maximum)	±30V
Input Capacitance (Ciss) (Maximum) at Vds	8800pF at 25V
Power Dissipation (Maximum)	830W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Through Hole
Supplier Device Package	PLUS247-3
Manufacturer Package	TO-247-3
Manufacturer Pack Quantity	30
MSL Level	1 (Unlimited)
Win Source Part Number	1191151-IXFX32N80P
Manufacturer Homepage	www.ixys.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IXFX32N80P CAD Model

Alternative Products

Description

The IXFX32N80P is a MOSFET transistor manufactured by IXYS.

Channel Type: N-channel
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current: 32A
Maximum On-Resistance: 270mOhm @ 16A and 10V
Maximum Gate-Source Voltage: ±30V
Gate-Source Threshold Voltage: 5V @ 8mA
Gate Charge: 150nC @ 10V
Input Capacitance: 8800pF @ 25V
Power Dissipation: 830W
Package: TO-247-3
Operating Temperature: -55°C to 150°C
Ideal for: Power supplies, motor control, and lighting systems

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