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IXFX52N60Q2 Real Image
Same model may have multiple batches, images only for reference.

IXFX52N60Q2

Part No IXFX52N60Q2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description Advanced Technical Information
Datasheet
IXFX52N60Q2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs 198nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6800pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 735W (Tc)
Rds On (Maximum) @ Id, Vgs 115 mOhm @ 500mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package PLUS247-3
Package TO-247-3
Win Source Part Number 1191155-IXFX52N60Q2
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXFX52N60Q2
Introduction Date January 08, 2003
ECCN EAR99
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian IXFX52N60Q2 CAD Model

Description

The IXYS IXFX52N60Q2 is an N-Channel MOSFET that has a maximum power dissipation of 735W (Tc). It is a part of the HiPerFET series and operates in the temperature range of -55°C to 150°C (TJ).

  • Power Dissipation: 735W (Tc)
  • Series: HiPerFET
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: Tube
  • Mounting: Through Hole
  • Package: TO-247-3
  • Drive Voltage (max Rds On, min Rds On): 10V
  • Manufacturer: IXYS

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Quantity Unit Price Ext. Price
1+ $105.3275 $105.3275
2+ $86.4228 $172.8456
3+ $83.7231 $251.1693
4+ $81.0220 $324.0880
5+ $78.3210 $391.6050
6+ $70.2192 $421.3152
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