The IXFX64N60P is a N-channel MOSFET manufactured by IXYS.

• Drain-Source Breakdown Voltage: 600V
• Continuous Drain Current @ 25°C: 64A (Tc)
• Gate-Source Threshold Voltage: 5V @ 8mA
• Maximum Gate Charge: 200nC @ 10V
• Maximum Rds On @ Id, Vgs: 96 mOhm @ 500mA, 10V
• Power Dissipation (Max): 1040W (Tc)
• Technology: MOSFET
• Polarity: N-Channel
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Package: TO-247-3 case/package
• Mounting: through a hole
• Operating Temperature Range: -55°C to 150°C (TJ)
• Maximum Input Capacitance: 12000pF @ 25V
• Maximum Gate-Source Voltage: ±30V
• Category: Discrete Semiconductor Products
• Status: active
• Supply and Demand Status: balanced