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Same model may have multiple batches, images only for reference.
IXGH30N60B2 Real Image
Same model may have multiple batches, images only for reference.

IXGH30N60B2

Part No IXGH30N60B2
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 70A 190W TO247 / IGBT PT 600 V 70 A 190 W Through Hole TO-247AD
Datasheet
IXGH30N60B2 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr IXYS
Series HiPerFAST™
Package Tube
Product Status Obsolete
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 70 A
Current - Collector Pulsed (Icm) 150 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 24A
Power - Max 190 W
Switching Energy 320µJ (off)
Input Type Standard
Gate Charge 66 nC
Td (on/off) @ 25°C 13ns/110ns
Test Condition 400V, 24A, 5Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD
Base Product Number IXGH30
Standard Package 30 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 922228-IXGH30N60B2
Ultra Librarian 3D Model Ultra Librarian IXGH30N60B2 CAD Model

Description

The IXGH30N60B2 is a single IGBT transistor from the HiPerFAST™ series by IXYS.

  • Package: TO-247-3
  • Power Rating: 190 W
  • Collector-Emitter Breakdown Voltage: 600 V
  • Maximum Collector Current: 70 A
  • Vce(on): 1.8V @ 15V, 24A
  • Gate Charge: 66 nC
  • Switching Time: 13ns/110ns @ 25°C
  • Mounting Type: Through-hole
  • Operating Temperature: -55°C to 150°C
  • Status: Obsolete

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