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Same model may have multiple batches, images only for reference.
IXGP20N120A3
Same model may have multiple batches, images only for reference.

IXGP20N120A3

Part No IXGP20N120A3
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1200V 40A 180W TO220 / IGBT PT 1200 V 40 A 180 W Through Hole TO-220-3
Datasheet
IXGP20N120A3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr IXYS
Series GenX3™
Package Tube
Product Status Active
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Power - Max 180 W
Switching Energy 2.85mJ (on), 6.47mJ (off)
Input Type Standard
Gate Charge 50 nC
Td (on/off) @ 25°C 16ns/290ns
Test Condition 960V, 20A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Base Product Number IXGP20
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 876109-IXGP20N120A3
Ultra Librarian 3D Model Ultra Librarian IXGP20N120A3 CAD Model

Description

The 876109-IXGP20N120A3 is a single IGBT transistor from the GenX3™ series.

  • Designed for: use in discrete semiconductor products
  • Maximum Power Rating: 180 W
  • Collector-Emitter Breakdown Voltage: 1200 V
  • Maximum Collector Current: 40 A
  • Vce(on): 2.5V @ 15V, 20A
  • Switching Energy (on): 2.85mJ
  • Switching Energy (off): 6.47mJ
  • Package: TO-220-3 package
  • Mounting: through-hole mounting
  • Operating Temperature Range: -55°C to 150°C
  • Active product from: IXYS

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