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Same model may have multiple batches, images only for reference.
IXKR25N80C Real Image
Same model may have multiple batches, images only for reference.

IXKR25N80C

Part No IXKR25N80C
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 25A ISOPLUS247 / Trans MOSFET N-CH 800V 25A 3-Pin(3+Tab) ISOPLUS 247
Datasheet
IXKR25N80C Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series CoolMOS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 800V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 2mA
Gate Charge (Qg) (Maximum) @ Vgs 355nC @ 10V
Vgs (Maximum) ±20V
FET Feature Super Junction
Rds On (Maximum) @ Id, Vgs 150 mOhm @ 18A, 10V
Operating Temperature Range -40°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package ISOPLUS247
Package ISOPLUS247
Win Source Part Number 777636-IXKR25N80C
Popularity Medium
Supply and Demand Status Limited
Family Name IXKR 25N80C
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian IXKR25N80C CAD Model

Description

The IXYS 715990 is a MOSFET transistor manufactured by IXYS.

  • Drain-Source Voltage (Vdss): 800V
  • Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Series: CoolMOS
  • Features: Super Junction FET
  • Package: ISOPLUS247
  • Mounting Style: Through Hole
  • Gate Charge (Qg) (maximum) @ Vgs: 355nC @ 10V
  • Voltage Gate-Source (Vgs) (maximum): ±20V
  • Rds On (maximum) @ Id, Vgs: 150 mOhm @ 18A, 10V
  • Estimated EOL Date: 2029

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