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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Bulk
Status Obsolete(EOL)
IGBT Type PT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 48A
Pulsed Collector Current 90A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 24A
Maximum Power Dissipation 250W
Total Switching Energy(Ets) 550μJ (off)
Input Type Standard
Gate Charge 50nC
Turn-on and Turn-off delay time 30ns/130ns
Testing Conditions 400V, 24A, 5 Ohm, 15V
Reverse Recovery Time (trr) 30ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXSH)
Win Source Part Number 1049700-IXSH30N60B2D1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXSH30N60B2D1 CAD Model

Description

The IXSH30N60B2D1 is an IGBT transistor that is designed for through-hole mounting.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 250W
  • Maximum Collector-Emitter Saturation Voltage: 2.5V @ 15V, 24A
  • Package: TO-247AD package
  • Status: obsolete
  • Supply and Demand Status: balanced

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