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Same model may have multiple batches, images only for reference.
IXTA06N120P Real Image
Same model may have multiple batches, images only for reference.

IXTA06N120P

Part No IXTA06N120P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1200V 0.6A TO-263
Datasheet
IXTA06N120P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1200V (1.2kV)
Continuous Drain Current at 25°C 600mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 13.3nC @ 10V
Max Input Capacitance 270pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 42W (Tc)
Maximum Rds On at Id,Vgs 32 Ohm @ 300mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (IXTA)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 205699-IXTA06N120P
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTA06N120P CAD Model

Description

The IXTA06N120P is an N-channel MOSFET manufactured by IXYS.

  • Drain-Source Breakdown Voltage: 1200V (1.2kV)
  • Continuous Drain Current: 600mA @ 25°C
  • Case/Package: TO-263 (IXTA)
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Power Dissipation: 42W (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 32 Ohm @ 300mA, 10V
  • Gate-Source Threshold Voltage: 4.5V @ 50μA
  • Mounting: SMD (SMT)
  • Packaging: Tube/rail

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.0889 $56.6223
16+ $6.6371 $106.1936
24+ $6.4297 $154.3128
33+ $6.2223 $205.3359
42+ $6.0149 $252.6258
56+ $5.3926 $301.9856
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Availability: 5,000 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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