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Same model may have multiple batches, images only for reference.
IXTA1R4N120P Real Image
Same model may have multiple batches, images only for reference.

IXTA1R4N120P

Part No IXTA1R4N120P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1200V 1.4A TO263
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 47 Weeks
Features N-Channel 1.4A (Tc) 86W (Tc) Surface Mount TO-263AA
Manufacturer IXYS
Series Polar™
Package Tube
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Case / Package TO-263AA
Family Name IXTA1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 50
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 876118-IXTA1R4N120P
Ultra Librarian 3D Model Ultra Librarian IXTA1R4N120P CAD Model

Description

The IXTA1R4N120P is a N-channel MOSFET from IXYS.

  • Maximum power dissipation: 86W (Tc)
  • Drain-source voltage: 120V
  • Continuous drain current @ 25°C: 1.4A (Tc)
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB package
  • Suitable for: use in discrete semiconductor products.

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Quantity Unit Price Ext. Price
30+ $1.7898 $53.6940
70+ $1.4685 $102.7950
110+ $1.4226 $156.4860
150+ $1.3768 $206.5200
190+ $1.3309 $252.8710
255+ $1.1932 $304.2660
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Availability: 2,900 pieces
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