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Same model may have multiple batches, images only for reference.
IXTA24P085T Real Image
Same model may have multiple batches, images only for reference.

IXTA24P085T

Part No IXTA24P085T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 85V 24A TO263 / P-Channel 85 V 24A (Tc) 83W (Tc) Surface Mount TO-263AA
Datasheet
IXTA24P085T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series TrenchP™
Package Tube
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 2090 pF @ 25 V
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Base Product Number IXTA24
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346823-IXTA24P085T
Ultra Librarian 3D Model Ultra Librarian IXTA24P085T CAD Model

Description

IXTA24P085T is a P-Channel MOSFET transistor from the TrenchP™ series of IXYS.

  • Drain to Source Voltage: 85 V
  • Power Dissipation: 83W (Tc)
  • Package Type: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Mounting Type: Surface Mount
  • FET Type: P-Channel
  • FET Feature: -
  • Maximum Gate-Source Voltage: ±15V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • MSL Level: 1 (Unlimited)
  • REACH Status: REACH Unaffected
  • Current: 24A (Tc)
  • Rds On: 65mOhm @ 12A, 10V
  • Vgs(th): 4.5V @ 250μA
  • Gate Charge (Qg): 41 nC @ 10 V
  • Input Capacitance (Ciss): 2090 pF @ 25 V

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