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Same model may have multiple batches, images only for reference.
IXTA2N80P Real Image
Same model may have multiple batches, images only for reference.

IXTA2N80P

Part No IXTA2N80P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 2A TO-263 / Trans MOSFET N-CH 800V 2A 3-Pin(2+Tab) D2PAK
Datasheet
IXTA2N80P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series PolarHV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 800V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5.5V @ 50μA
Gate Charge (Qg) (Maximum) @ Vgs 10.6nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 440pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 70W (Tc)
Rds On (Maximum) @ Id, Vgs 6 Ohm @ 1A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package TO-263 (IXTA)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 777645-IXTA2N80P
Popularity Medium
Supply and Demand Status Limited
Quantity per package 50
Family Name IXTA2N80P
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IXTA2N80P CAD Model

Description

The IXYS IXTA2N80P is an N-channel MOSFET transistor manufactured by IXYS.

  • Drain Source Voltage: 800V
  • Continuous Drain Current (Tc): 2A
  • Power Dissipation (Tc): 70W
  • Gate Charge @ 10V: 10.6nC
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Input Capacitance @ 25Vds: 440pF
  • Operating Temperature Range (TJ): -55°C to 150°C
  • Status: Obsolete (EOL)
  • Quantity Per Package: 50

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