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Same model may have multiple batches, images only for reference.
IXTA90N15T Real Image
Same model may have multiple batches, images only for reference.

IXTA90N15T

Part No IXTA90N15T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 90A TO263 / N-Channel 150 V 90A (Tc) 455W (Tc) Surface Mount TO-263AA
Datasheet
IXTA90N15T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Trench
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 25 V
Power Dissipation (Max) 455W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Base Product Number IXTA90
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346720-IXTA90N15T
Ultra Librarian 3D Model Ultra Librarian IXTA90N15T CAD Model

Description

The IXTA90N15T is a N-Channel MOSFET transistor from IXYS.

  • Series: Trench series
  • Drain to Source Voltage: 150V
  • Power Dissipation: 455W (Tc)
  • Continuous Drain Current: 90A (Tc) @ 25°C
  • Maximum Gate-Source Voltage: ±30V
  • Gate Threshold Voltage: 4.5V @ 1mA
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Mounting: surface mounted
  • Input Capacitance: 4100 pF @ 25V
  • Maximum On-State Resistance: 20mOhm @ 45A, 10V
  • Suitable for: power supplies, motor control, and DC-DC converters

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