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IXTV22N50P

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Part No	IXTV22N50P
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 500V 22A PLUS220 / N-Channel 500 V 22A (Tc) 350W (Tc) Through Hole PLUS220
Sample
Rohs State	Need to verify
ECAD Module
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Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	IXYS
Series	PolarHV™
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	270mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2630 pF @ 25 V
Power Dissipation (Max)	350W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PLUS220
Package / Case	TO-220-3, Short Tab
Base Product Number	IXTV22
Standard Package	50
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1346648-IXTV22N50P
Ultra Librarian 3D Model	Ultra Librarian IXTV22N50P CAD Model

Alternative Products

Description

The IXYS IXTV22N50P is an N-Channel MOSFET transistor from the PolarHV™ series of IXYS.

Package: TO-220-3, Short Tab
Drain to Source Voltage (Vdss): 500 V
Maximum Power Dissipation: 350W (Tc)
Maximum Gate-Source Voltage (Vgs): ±30V
Temperature Range: -55°C to 150°C (TJ)
Current-Continuous Drain (Id): 22A (Tc)
Maximum On-Resistance (Rds On): 270mOhm @ 11A, 10V
Gate Charge (Qg): 50 nC @ 10 V
Input Capacitance (Ciss): 2630 pF @ 25 V
Ideal for use in: applications such as power supplies, motor control, and lighting.

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