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Same model may have multiple batches, images only for reference.
IXTC180N10T Real Image
Same model may have multiple batches, images only for reference.

IXTC180N10T

Part No IXTC180N10T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 90A ISOPLUS220 / N-Channel 100 V 90A (Tc) 150W (Tc) Through Hole ISOPLUS220™
Sample
Rohs State Need to verify
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Power Dissipation (Max) 150W (Tc)
Mounting Type Through Hole
Supplier Device Package ISOPLUS220™
Package / Case ISOPLUS220™
Base Product Number IXTC180
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346735-IXTC180N10T
Ultra Librarian 3D Model Ultra Librarian IXTC180N10T CAD Model

Description

The IXYS MOSFET (Metal Oxide) transistor is a N-Channel FET type that features a drain to source voltage of 100V and a power dissipation of 150W (Tc).

  • FET Type: N-Channel
  • Drain to Source Voltage: 100V
  • Power Dissipation: 150W (Tc)
  • Mounting: Through Hole
  • Package/Case: ISOPLUS220™
  • FET Type: Single FET, MOSFET transistor
  • Status: Obsolete
  • Current-Continuous Drain (Id) @ 25°C: 90A (Tc)

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