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IXTC220N055T

Part No IXTC220N055T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 130A ISOPLUS220 / N-Channel 55 V 130A (Tc) 150W (Tc) Through Hole ISOPLUS220™
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Rohs State Need to verify
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series TrenchMV™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 158 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7200 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISOPLUS220™
Package / Case ISOPLUS220™
Base Product Number IXTC220
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346653-IXTC220N055T
Ultra Librarian 3D Model Ultra Librarian IXTC220N055T CAD Model

Description

The IXYS IXTC220N055T MOSFET transistor from IXYS is a high-performance N-channel FET with a drain-to-source voltage of 55V and a continuous drain current of 130A @ 25°C.

  • On-Resistance: 4.4mOhm @ 25A and 10V
  • Gate Charge: 158nC @ 10V
  • Input Capacitance: 7200pF @ 25V
  • Package: ISOPLUS220™ package
  • Power Dissipation: 150W @ Tc
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Suitable for Use: in a variety of applications, including power supplies, motor drives, and DC-DC converters.

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