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Same model may have multiple batches, images only for reference.
IXTD1R4N60P 11
Same model may have multiple batches, images only for reference.

IXTD1R4N60P 11

Part No IXTD1R4N60P 11
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 1.4A DIE / N-Channel 600 V 1.4A (Tc) 50W (Tc) Surface Mount Die
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series PolarHV™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 5.2 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V
Power Dissipation (Max) 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
Base Product Number IXTD1R4
Standard Package 1
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346773-IXTD1R4N60P 11
Ultra Librarian 3D Model Ultra Librarian IXTD1R4N60P 11 CAD Model

Description

The IXTD1R4N60P 11 is an obsolete MOSFET transistor from IXYS.

  • FET Type: MOSFET
  • Channel Type: N-Channel
  • Series: PolarHV
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
  • Mounting Type: Surface Mount
  • Package/Case: Die
  • Product Status: Obsolete
  • Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
  • REACH: Unaffected
  • ECCN: EAR99
  • MSL Level: 1 (Unlimited)
  • HTSUS: 8541.29.0095

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