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Same model may have multiple batches, images only for reference.
IXTF250N075T Real Image
Same model may have multiple batches, images only for reference.

IXTF250N075T

Part No IXTF250N075T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 140A I4PAC / N-Channel 75 V 140A (Tc) 200W (Tc) Through Hole ISOPLUS i4-PAC™
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series TrenchMV™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9900 pF @ 25 V
Power Dissipation (Max) 200W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISOPLUS i4-PAC™
Package / Case i4-Pac™-5
Base Product Number IXTF250
Standard Package 25
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346826-IXTF250N075T
Ultra Librarian 3D Model Ultra Librarian IXTF250N075T CAD Model

Description

The IXTF250N075T is a N-Channel MOSFET (Metal Oxide) with a maximum power dissipation of 200W (Tc) and a drain to source voltage of 75 V.

  • Power Dissipation: 200W (Tc)
  • Drain to Source Voltage: 75 V
  • Mounting Type: Through Hole
  • Package: i4-Pac™-5
  • Voltage Gate Source: ±20V
  • Temperature Range: -55°C ~ 175°C (TJ)
  • ECCN: EAR99

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