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Same model may have multiple batches, images only for reference.
IXTF280N055T Real Image
Same model may have multiple batches, images only for reference.

IXTF280N055T

Part No IXTF280N055T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 160A I4PAC / N-Channel 55 V 160A (Tc) 200W (Tc) Through Hole ISOPLUS i4-PAC™
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series TrenchMV™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9800 pF @ 25 V
Power Dissipation (Max) 200W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISOPLUS i4-PAC™
Package / Case i4-Pac™-5
Base Product Number IXTF280
Standard Package 25
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346779-IXTF280N055T
Ultra Librarian 3D Model Ultra Librarian IXTF280N055T CAD Model

Description

The IXTF280N055T is a N-Channel MOSFET transistor designed for use in Discrete Semiconductor Products - Transistors - FETs, MOSFETs.

  • Manufacturer: IXYS
  • FET Type: MOSFET
  • Channel Type: N-Channel
  • Series: TrenchMV™
  • Drain to Source Voltage (Vdss): 55 V
  • Power Dissipation (Max): 200W (Tc)
  • Mounting Type: Through Hole
  • Package Type: i4-Pac™-5
  • Package/Case: i4-Pac™-5
  • Operating Temperature Range: -55°C ~ 175°C (TJ)
  • Gate-Source Voltage (Vgs): ±20V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
  • Status: Obsolete

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