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Same model may have multiple batches, images only for reference.
IXTH180N085T Real Image
Same model may have multiple batches, images only for reference.

IXTH180N085T

Part No IXTH180N085T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 85V 180A TO-247
Datasheet
IXTH180N085T Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 85V
Continuous Drain Current at 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 7500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 430W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049774-IXTH180N085T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH180N085T CAD Model

Description

The IXYS MOSFET is a high-performance N-channel power MOSFET designed for use in a variety of applications.

  • Maximum Power Dissipation: 430W (Tc)
  • Ideal for: use in discrete semiconductor products
  • Drain-Source Breakdown Voltage: 85V
  • Continuous Drain Current: 180A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Package: TO-247 (IXTH) case
  • Mounting: through a hole
  • Temperature Range: -55°C to 175°C (TJ)
  • Maximum Rds On: 5.5 mOhm @ 25A, 10V
  • Supply and Demand: sufficient

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