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Same model may have multiple batches, images only for reference.
IXTH460P2 Real Image
Same model may have multiple batches, images only for reference.

IXTH460P2

Part No IXTH460P2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 24A TO-247
Datasheet
IXTH460P2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 48nC @ 10V
Max Input Capacitance 2890pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 480W (Tc)
Maximum Rds On at Id,Vgs 270 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049811-IXTH460P2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH460P2 CAD Model

Description

The IXYS 1049811-IXTH460P2 is an N-channel MOSFET with a drain-source breakdown voltage of 500V and a continuous drain current of 24A at 25°C.

  • Power Dissipation: 480W (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Rds On @ Id,Vgs: 270 mOhm @ 12A, 10V
  • Mounting Type: Through Hole
  • Package: TO-247-3
  • Popularity Rating: Medium
  • Supply and Demand Status: Sufficient
  • Suitable for: applications such as power supplies, motor control, and audio amplifiers

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.8972 $58.7664
29+ $4.0182 $116.5278
45+ $3.8924 $175.1580
62+ $3.7665 $233.5230
80+ $3.6417 $291.3360
107+ $3.2652 $349.3764
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Availability: 6,300 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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