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Same model may have multiple batches, images only for reference.
IXTH6N50D2 Real Image
Same model may have multiple batches, images only for reference.

IXTH6N50D2

Part No IXTH6N50D2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 6A TO247
Datasheet
IXTH6N50D2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 6A (Tc)
Max Gate Charge 96nC @ 5V
Max Input Capacitance 2800pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Depletion Mode
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 500 mOhm @ 3A, 0V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049826-IXTH6N50D2
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian IXTH6N50D2 CAD Model

Description

The IXYS IXTH6N50D2 is a through-hole mounted N-channel MOSFET with a maximum drain-source breakdown voltage of 500V and a continuous drain current of 6A (Tc).

  • Maximum Power Dissipation: 300W (Tc)
  • Maximum Gate Charge: 96nC @ 5V
  • Package: TO-247
  • Maximum Input Capacitance: 2800pF @ 25V
  • Maximum Rds On: 500 mOhm @ 3A, 0V
  • Configuration: Depletion Mode
  • Supply and Demand Status: Sufficient
  • Application: industrial power management applications

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