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IXTH6N90

Part No IXTH6N90
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 6A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 2600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 180W (Tc)
Maximum Rds On at Id,Vgs 1.8 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049827-IXTH6N90
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian IXTH6N90 CAD Model

Description

The IXTH6N90 is a MOSFET electronic component manufactured by IXYS.

  • Status: Active
  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Drain-Source Breakdown Voltage: 900V
  • Continuous Drain Current: 6A @ 25°C
  • Recommendation: industrial power management

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