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Same model may have multiple batches, images only for reference.
IXTH75N15 Real Image
Same model may have multiple batches, images only for reference.

IXTH75N15

Part No IXTH75N15
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 75A TO-247
Datasheet
IXTH75N15 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 210nC @ 10V
Max Input Capacitance 5400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 23 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049833-IXTH75N15
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTH75N15 CAD Model

Description

The IXYS MOSFET is a high-performance N-channel power MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 75A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 210nC @ 10V
  • Technology: TO-247-3
  • Mounting: through-hole
  • Power Dissipation: 330W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Packaging: tube/rail

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Quantity Unit Price Ext. Price
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47+ $2.4833 $116.7151
73+ $2.4059 $175.6307
100+ $2.3273 $232.7300
129+ $2.2499 $290.2371
172+ $2.0178 $347.0616
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