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Same model may have multiple batches, images only for reference.
IXTK90P20P Real Image
Same model may have multiple batches, images only for reference.

IXTK90P20P

Part No IXTK90P20P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 200V 90A TO264 / P-Channel 200 V 90A (Tc) 890W (Tc) Through Hole TO-264 (IXTK)
Datasheet
IXTK90P20P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 44mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 205 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 12000 pF @ 25 V
Power Dissipation (Max) 890W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-264 (IXTK)
Case / Package TO-264-3, TO-264AA
Base Product Number IXTK90
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 25
Win Source Part Number 1324100-IXTK90P20P
Ultra Librarian 3D Model Ultra Librarian IXTK90P20P CAD Model

Description

The IXTK90P20P is a P-channel MOSFET transistor manufactured by IXYS.

  • Maximum Power Dissipation: 890W (Tc)
  • Drain-Source Voltage: 200V
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 205nC @ 10V
  • Maximum Rds On @ Id, Vgs: 44mOhm @ 500mA, 10V
  • Mounting Type: through-hole
  • Package: TO-264 package

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Quantity Unit Price Ext. Price
3+ $18.0243 $54.0729
6+ $16.8615 $101.1690
10+ $16.2801 $162.8010
14+ $15.1172 $211.6408
18+ $14.5358 $261.6444
22+ $13.9543 $306.9946
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