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MJ15003G

Part No MJ15003G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Complementary Silicon Power Transistors
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tray
Transistor Type NPN
Current - Collector (Ic) (Maximum) 20A
Voltage - Collector Emitter Breakdown (Maximum) 140V
Vce Saturation (Maximum) @ Ib, Ic 1V @ 500mA, 5A
Current - Collector Cutoff (Maximum) 250μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 25 @ 5A, 2V
Power - Max 250W
Frequency - Transition 2MHz
Operating Temperature Range -65°C ~ 200°C (TJ)
Mounting Style Through Hole
Package TO-204AA, TO-3
Manufacturer Package TO-3
Win Source Part Number 1223574-MJ15003G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Audio
Family Name MJ15003
Introduction Date August 31, 1995
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date 2023
Ultra Librarian 3D Model Ultra Librarian MJ15003G CAD Model

Description

ON Semiconductor MJ15003G High-Power NPN Transistor

The MJ15003G is a high-power NPN bipolar transistor manufactured by ON Semiconductor, a trusted name in the semiconductor industry. This robust transistor is designed to handle high voltage and current, making it ideal for a wide range of power amplification and switching applications.

Constructed with silicon epitaxial base technology, the MJ15003G is part of ON Semiconductor's series of power transistors that are well-suited for audio power amplifiers, high-fidelity amplifiers, and other demanding electronic circuits. It features a collector-emitter voltage (VCEO) of 140V, collector-base voltage (VCBO) of 140V, and emitter-base voltage (VEBO) of 7V, which allows it to efficiently manage high-power operations.

With a continuous collector current (IC) rating of up to 20A, this transistor can handle significant current without compromise. Additionally, it boasts a power dissipation (PD) of 250W, which ensures reliable performance even under strenuous conditions. The MJ15003G is characterized by its low collector-emitter saturation voltage, which contributes to its high efficiency and reduced power loss during operation.

The device comes in a TO-3 package, known for its excellent thermal properties, ensuring that the transistor remains cool during high-power applications. The metal case provides not only superior heat dissipation but also mechanical durability and robustness, which is critical in industrial environments.

ON Semiconductor has designed the MJ15003G with features such as a high DC current gain (hFE) and a wide area of safe operation (SOA), which provide stability and reliability across various conditions. This makes it highly suitable for linear and switching applications, where consistent performance is essential.

Whether you're designing power supplies, motor controllers, or audio amplifiers, the MJ15003G offers the performance and reliability needed for your high-power circuitry. Its commitment to quality and durability, backed by ON Semiconductor's reputation, makes it a preferred choice for engineers and professionals seeking components that deliver exceptional performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.9142 $53.4852
14+ $7.3143 $102.4002
22+ $7.0857 $155.8854
30+ $6.8571 $205.7130
38+ $6.6286 $251.8868
51+ $5.9428 $303.0828
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Availability: 800 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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