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Same model may have multiple batches, images only for reference.
IXTP160N075T Real Image
Same model may have multiple batches, images only for reference.

IXTP160N075T

Part No IXTP160N075T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 160A TO-220
Datasheet
IXTP160N075T Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 112nC @ 10V
Max Input Capacitance 4950pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 205706-IXTP160N075T
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTP160N075T CAD Model

Description

The IXYS IXTP160N075T is a MOSFET technology-based N-channel discrete semiconductor product.

  • Case/Package: TO-220AB
  • Mounting: Through-hole
  • Power Dissipation: 360W (Tc)
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 160A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 6 mOhm @ 25A, 10V
  • Dimension: TO-220-3
  • Popularity: Medium

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