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Same model may have multiple batches, images only for reference.
IXTP182N055T Real Image
Same model may have multiple batches, images only for reference.

IXTP182N055T

Part No IXTP182N055T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 182A TO-220
Datasheet
IXTP182N055T Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 182A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 114nC @ 10V
Max Input Capacitance 4850pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049872-IXTP182N055T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTP182N055T CAD Model

Description

The IXYS IXTP182N055T is an N-channel MOSFET with a drain-source breakdown voltage of 55V.

  • Maximum Power Dissipation: 360W (Tc)
  • Packaging: tube/rail
  • Mounting: through hole-mounted
  • Dimension: TO-220-3
  • Continuous Drain Current: 182A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 114nC @ 10V
  • Maximum Input Capacitance: 4850pF @ 25V
  • Use: discrete semiconductor products
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: TO-220AB
  • Supply and Demand: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.5888 $59.5424
55+ $2.1242 $116.8310
85+ $2.0579 $174.9215
116+ $1.9915 $231.0140
150+ $1.9251 $288.7650
201+ $1.7260 $346.9260
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Availability: 28,300 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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