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IXTP2R4N120P

Name: IXTP2R4N120P
Brand: IXYS
SKU: 1346792
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IXTP2R4N120P
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 1200V 2.4A TO220AB / N-Channel 1200 V 2.4A (Tc) 125W (Tc) Through Hole TO-220-3
Datasheet	IXTP2R4N120P Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	IXYS
Series	Polar
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	37 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1207 pF @ 25 V
Power Dissipation (Max)	125W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
Base Product Number	IXTP2
Standard Package	50
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
California Prop 65	Warning Information
Win Source Part Number	1346792-IXTP2R4N120P
Ultra Librarian 3D Model	Ultra Librarian IXTP2R4N120P CAD Model

Alternative Products

Description

The IXTP2R4N120P is a N-channel MOSFET transistor from the Polar series of IXYS.

Drain to Source Voltage: 1200 V
Power Dissipation: 125W (Tc)
Package/Case: TO-220-3
Supplier Device Package: TO-220-3
Maximum Vgs: ±20V
Temperature Range: -55°C to 150°C (TJ)
Rds On (Max): 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
11+	$4.8723	$53.5953
26+	$3.9978	$103.9428
39+	$3.8729	$151.0431
54+	$3.7480	$202.3920
70+	$3.6230	$253.6100
93+	$3.2482	$302.0826

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 420 pieces

MOQ: 11 pcs

Order Increment : 1 pcs

Qty:

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