The IXYS MOSFET (Metal Oxide) transistor is a N-Channel type transistor that has a drain to source voltage (Vdss) of 40 V and a continuous drain current (Id) of 300A (Tc) @ 25°C.

• Rds On (Max) @ Id, Vgs: 2.5mOhm @ 500mA, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Power Dissipation (Max): 480W (Tc)
• Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
• Vgs (Max): ±20V
• Operating Temperature Range: -55°C ~ 175°C (TJ)
• Package: TO-220-3
• Supplier Device Package: TO-220-3
• Gate Voltage (Max Rds On, Min Rds On): 10V
• ECCN: EAR99
• Compliance: ROHS3