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Same model may have multiple batches, images only for reference.
IXTP60N20T Real Image
Same model may have multiple batches, images only for reference.

IXTP60N20T

Part No IXTP60N20T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 60A TO-220
Datasheet
IXTP60N20T Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 73nC @ 10V
Max Input Capacitance 4530pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049897-IXTP60N20T
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTP60N20T CAD Model

Description

The IXYS MOSFET is a high-performance N-Channel power MOSFET that is designed to deliver reliable and efficient performance in a range of applications.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 60A @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 73nC @ 10V
  • Maximum Input Capacitance: 4530pF @ 25V
  • Package: TO-220AB
  • Operating Temperature Range: -55°C to 175°C (TJ)

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32+ $3.1444 $100.6208
50+ $3.0461 $152.3050
68+ $2.9479 $200.4572
88+ $2.8496 $250.7648
118+ $2.5548 $301.4664
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Availability: 8,920 pieces
MOQ: 14 pcs
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