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Same model may have multiple batches, images only for reference.
IXTP7N60PM Real Image
Same model may have multiple batches, images only for reference.

IXTP7N60PM

Part No IXTP7N60PM
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4A TO-220
Datasheet
IXTP7N60PM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 100μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 1180pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 41W (Tc)
Maximum Rds On at Id,Vgs 1.1 Ohm @ 3.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049902-IXTP7N60PM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTP7N60PM CAD Model

Description

The IXYS MOSFET is a high-performance N-channel power MOSFET designed for use in a wide range of electronic applications.

  • Power Dissipation: 41W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 4A (Tc)
  • Gate-Source Threshold Voltage: 5.5V @ 100μA
  • Maximum Rds On at Id,Vgs: 1.1 Ohm @ 3.5A, 10V
  • Package: TO-220AB
  • Mounting Type: Through Hole

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