This N-channel MOSFET transistor from IXYS' Ultra X4 series has a drain-to-source voltage (Vdss) of 200V and a power dissipation (max) of 360W (Tc).

• Series: Ultra X4
• Drain-to-Source Voltage (Vdss): 200V
• Power Dissipation (max): 360W (Tc)
• Package: Tube
• Standard Package: 50 pieces
• Gate-Source Voltage (Vgs): ±20V
• Temperature Range: -55°C to 175°C (TJ)
• FET Type: MOSFET (metal oxide)
• Mounting Type: Through-Hole
• Package/Case: TO-220-3
• Supplier Device Package: TO-220
• Current Continuous Drain (Id) @ 25°C: 94A (Tc)
• Rds on (max) @ Id, Vgs: 10.6mOhm @ 47A, 10V
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (max) @ Vgs: 77nC @ 10V
• Input Capacitance (Ciss) (max) @ Vds: 5050pF @ 25V