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IXTQ240N055T

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Part No	IXTQ240N055T
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 55V 240A TO3P / N-Channel 55 V 240A (Tc) 480W (Tc) Through Hole TO-3P
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	IXYS
Series	TrenchMV™
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	240A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	170 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7600 pF @ 25 V
Power Dissipation (Max)	480W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3P
Package / Case	TO-3P-3, SC-65-3
Base Product Number	IXTQ240
Standard Package	30
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1346675-IXTQ240N055T
Ultra Librarian 3D Model	Ultra Librarian IXTQ240N055T CAD Model

Alternative Products

Description

The IXTQ240N055T is an N-channel MOSFET transistor from the TrenchMV™ series by IXYS.

Package: Tube
Standard Package: 30
Technology: MOSFET (metal oxide)
Drain to Source Voltage (Vdss): 55 V
Power Dissipation: 480W (Tc)
Mounting Type: Through-Hole
Package: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Vgs: ±20V
Temperature Range: -55°C ~ 175°C (TJ)
Drive Voltage (Max Rds On, Min Rds On): 10V
Continuous Drain Current (Id): 240A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Application: Discrete semiconductor products, transistors, and FETs

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