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Same model may have multiple batches, images only for reference.
IXTQ30N60P Real Image
Same model may have multiple batches, images only for reference.

IXTQ30N60P

Part No IXTQ30N60P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 30A TO-3P
Datasheet
IXTQ30N60P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 82nC @ 10V
Max Input Capacitance 5050pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 540W (Tc)
Maximum Rds On at Id,Vgs 240 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1049929-IXTQ30N60P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTQ30N60P CAD Model

Description

The IXYS MOSFET is a high-performance N-channel FET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 540W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 30A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Package: TO-3P
  • Dimensions: TO-3P-3, SC-65-3
  • Maximum Rds On at Id,Vgs: 240 mOhm @ 15A, 10V
  • Popular Choice for: medium power applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.3058 $61.8348
14+ $8.4560 $118.3840
22+ $8.1919 $180.2218
30+ $7.9276 $237.8280
38+ $7.6633 $291.2054
51+ $6.8706 $350.4006
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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