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Same model may have multiple batches, images only for reference.
IXTQ50N20P Real Image
Same model may have multiple batches, images only for reference.

IXTQ50N20P

Part No IXTQ50N20P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description PolarHT Power MOSFET N-Channel Enhancement Mode
Datasheet
IXTQ50N20P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series PolarHT
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 200V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 70nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2720pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 360W (Tc)
Rds On (Maximum) @ Id, Vgs 60 mOhm @ 50A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-3P
Package TO-3P-3, SC-65-3
Win Source Part Number 1191293-IXTQ50N20P
Manufacturer Homepage www.ixys.com
Family Name IXTQ50N20P
Introduction Date May 17, 2004
ECCN EAR99
Country of Origin Republic of Korea
Estimated EOL Date 2024
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTQ50N20P CAD Model

Description

The IXTQ50N20P is an N-Channel MOSFET from IXYS with a TO-3P package.

  • Series: PolarHT
  • Current Continuous Drain: 50A @ 25°C
  • Drain-Source Voltage: 200V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Input Capacitance: 2720pF @ 25V
  • Gate Charge: 70nC @ 10V
  • Power Dissipation: 360W @ Tc
  • Rds On: 60 mOhm @ 50A and 10V
  • Supply and Demand Status: Sufficient

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