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Same model may have multiple batches, images only for reference.
IXTQ96N20P Real Image
Same model may have multiple batches, images only for reference.

IXTQ96N20P

Part No IXTQ96N20P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 96A TO-3P
Datasheet
IXTQ96N20P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 96A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 145nC @ 10V
Max Input Capacitance 4800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 600W (Tc)
Maximum Rds On at Id,Vgs 24 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1049952-IXTQ96N20P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTQ96N20P CAD Model

Description

The IXYS 1049952-IXTQ96N20P is a N-Channel MOSFET with a drain-source breakdown voltage of 200V and a continuous drain current @ 25°C of 96A (Tc).

  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 145nC @ 10V
  • Maximum Input Capacitance: 4800pF @ 25V
  • Maximum Rds On @ Id,Vgs: 24 mOhm @ 500mA, 10V
  • Mounting: through a hole
  • Package: TO-3P case
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.1726 $50.0712
26+ $3.9085 $101.6210
40+ $3.7764 $151.0560
57+ $3.5124 $200.2068
74+ $3.3803 $250.1422
93+ $3.2483 $302.0919
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 31,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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