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Same model may have multiple batches, images only for reference.
IXTQ96N25T Real Image
Same model may have multiple batches, images only for reference.

IXTQ96N25T

Part No IXTQ96N25T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 96A TO-3P
Datasheet
IXTQ96N25T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 96A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 114nC @ 10V
Max Input Capacitance 6100pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 625W (Tc)
Maximum Rds On at Id,Vgs 29 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1049953-IXTQ96N25T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTQ96N25T CAD Model

Description

IXTQ96N25T is a N-Channel MOSFET manufactured by IXYS.

  • Channel: N-Channel MOSFET
  • Maximum Power Dissipation: 625W (Tc)
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current @ 25°C: 96A (Tc)
  • Maximum Rds On @ Id,Vgs: 29 mOhm @ 500mA, 10V
  • Package: TO-3P-3, SC-65-3
  • Mounting: Through Hole
  • Gate-Source Threshold Voltage: 5V @ 1mA
  • Maximum Gate Charge: 114nC @ 10V
  • Input Capacitance: 6100pF @ 25V
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7199 $50.3930
170+ $0.5907 $100.4190
265+ $0.5723 $151.6595
365+ $0.5538 $202.1370
470+ $0.5354 $251.6380
625+ $0.4800 $300.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 930 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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