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IXTT34N65X2HV

Name: IXTT34N65X2HV
Brand: IXYS
SKU: 1346713
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IXTT34N65X2HV
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 650V 34A TO268HV / N-Channel 650 V 34A (Tc) 540W (Tc) Surface Mount TO-268HV (IXTT)
Datasheet	IXTT34N65X2HV Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	IXYS
Series	Ultra X2
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	96mOhm @ 17A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 25 V
Power Dissipation (Max)	540W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-268HV (IXTT)
Package / Case	TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA
Base Product Number	IXTT34
Standard Package	30
MSL Level	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
California Prop 65	Warning Information
Win Source Part Number	1346713-IXTT34N65X2HV
Ultra Librarian 3D Model	Ultra Librarian IXTT34N65X2HV CAD Model

Alternative Products

Description

The IXTT34N65X2HV is an Ultra X2 N-channel MOSFET manufactured by IXYS.

Maximum Power Dissipation: 540W (Tc)
Package: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Operating Temperature: -55°C to 150°C (TJ)
Suitable for: power supplies, motor control, and inverters

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