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Same model may have multiple batches, images only for reference.
IXTV230N085T Real Image
Same model may have multiple batches, images only for reference.

IXTV230N085T

Part No IXTV230N085T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 85V 230A PLUS220 / N-Channel 85 V 230A (Tc) 550W (Tc) Through Hole PLUS220
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series TrenchMV™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85 V
Current - Continuous Drain (Id) @ 25°C 230A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 187 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9900 pF @ 25 V
Power Dissipation (Max) 550W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS220
Package / Case TO-220-3, Short Tab
Base Product Number IXTV230
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346774-IXTV230N085T
Ultra Librarian 3D Model Ultra Librarian IXTV230N085T CAD Model

Description

The IXTV230N085T is a N-Channel MOSFET transistor from the TrenchMV™ series of IXYS.

  • FET Type: MOSFET
  • Channel Type: N-Channel
  • Series: TrenchMV™
  • Mounting Type: Through Hole
  • Drain to Source Voltage: 85V
  • Maximum Power Dissipation: 550W (Tc)
  • Package/Case Type: TO-220-3, Short Tab
  • Vgs(max): ±20V
  • Operating Temperature Range: -55°C ~ 175°C (TJ)
  • Continuous Drain Current: 230A (Tc)
  • Maximum Rds On: 4.4mOhm @ 50A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V

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