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IXTX120N65X2

Part No IXTX120N65X2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 120A PLUS247-3  /  N-Channel 650 V 120A (Tc) 1250W (Tc) Through Hole PLUS247™-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series Ultra X2
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 13600 pF @ 25 V
Power Dissipation (Max) 1250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS247™-3
Package / Case TO-247-3 Variant
Base Product Number IXTX120
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1013995-IXTX120N65X2
Ultra Librarian 3D Model Ultra Librarian IXTX120N65X2 CAD Model

Description

The IXYS Ultra X2 MOSFET is a high-quality electronic component that is perfect for use in a variety of applications.

  • Drain to Source Voltage: 650V
  • Continuous Drain Current: 120A @ 25°C
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Temperature Range: -55°C ~ 150°C (TJ)
  • Power Dissipation (Max): 1250W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.3499 $50.2485
37+ $2.7487 $101.7019
57+ $2.6628 $151.7796
78+ $2.5769 $200.9982
101+ $2.4910 $251.5910
135+ $2.2333 $301.4955
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 601 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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